2N6517 NPN High Voltage Transistor

The 2N6517 is an NPN epitaxial silicon transistor built specifically for high-voltage, low-current switching and small-signal amplification. Its standout characteristic is a 350V collector-emitter and collector-base breakdown rating in a compact TO-92 package — unusually high for a plastic through-hole part, which normally tops out well under 100V.

Because the voltage headroom is so large while the current rating stays modest (500mA max), the 2N6517 is best suited to circuits that switch or sense high potentials at low current: high-voltage relay drivers, neon/gas-discharge display drivers, feedback and bias networks in HV power supplies, and sensing stages where the transistor sees large voltage swings but never much current. It is the NPN complement to the PNP 2N6520.

1. 350V collector-emitter and collector-base breakdown voltage
2. Compact, low-cost TO-92 package
3. 500mA maximum collector current
4. 625mW power dissipation
5. 40MHz minimum transition frequency
6. hFE range of 30–200 at 30mA
7. Complementary PNP counterpart available (2N6520)
8. 150°C maximum junction temperature