2N1711 NPN General Purpose Transistor

2N1711 NPN General Purpose Transistor
1. Collector-Emitter Voltage (VCER): 50V
2. Collector-Base Voltage (VCBO): 75V
3. Collector Current (IC): 500mA (1A peak)
4. Power Dissipation (PD): up to 3W (Tc)
5. Package: TO-39

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Description

The 2N1711 is a silicon Planar Epitaxial NPN transistor in a TO-39 metal case, built for high-performance amplifier, oscillator, and switching circuits. It’s rated for a 50V collector-emitter voltage (with RBE≤10Ω) and 75V collector-base voltage, giving it solid headroom for DC and wideband amplifier stages.

It’s also used to advantage in circuits where low noise is important, and its 500mA continuous collector current (1A peak) with hermetic metal-can construction make it a dependable general-purpose choice for designs needing both voltage margin and thermal reliability.

  1. High-performance amplifier, oscillator, and switching applications
  2. 50V VCER, 75V collector-base voltage
  3. 500mA continuous collector current, up to 1A peak
  4. 800mW power dissipation (Ta=25°C), up to 3W (Tc)
  5. Hermetically sealed TO-39 metal case
  6. Low-noise capable for sensitive amplifier stages
  7. 7V emitter-base voltage rating

نظرة عامة ومواصفات المنتج — بالعربية

2N1711 NPN General Purpose Transistor متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم Transistor، بسعر 1,00 EGP. كود المنتج لدينا: EK934. المنتج غير متوفر حالياً — تواصل معنا عبر واتساب لمعرفة موعد توفره القادم.

أهم المواصفات الفنية:

  • Polarity: NPN
  • Package: TO-39 (hermetic metal can)
  • Emitter Base Voltage (Vebo): 7V
  • Typical Applications: DC/wideband amplifier / Oscillator / Switching / Low-noise stages
  • الوزن: 1 g

منتج أصلي بجودة مضمونة من إكوسترا، مع دعم فني ومتابعة بعد البيع لكل عملائنا في مصر.

تصفّح المزيد من Transistor في إكوسترا.

Specification

Specification

WeightWeight1 g
Dimensions0,5 × 0,5 × 0,45 cm
PolarityNPN
PackageTO-39 (hermetic metal can)
Emitter-Base Voltage (VEBO)7V
Typical ApplicationsDC/wideband amplifier, Oscillator, Switching, Low-noise stages

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