2N2222 NPN Transistor

  • NPN BJT with max Ic = 800 mA
  • Max Vce = 40 V
  • Gain (hFE) between 100–300
  • Fast switching speed
  • TO-92 / TO-18 package options
  • Ideal for general purpose amplification and switching

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Description

The 2N2222 is a widely used NPN bipolar junction transistor (BJT) suitable for switching and amplification purposes. Its robust design and high collector current capacity make it ideal for medium-power applications in both analog and digital circuits.

Specifications:

  • Type: NPN Bipolar Junction Transistor
  • Gain (hFE): 110 (typical)
  • Collector Current (IC): Up to 600mA
  • Voltage Ratings:
    • Collector-Emitter Voltage (VCEO): 30V
    • Collector-Base Voltage (VCBO): 60V
    • Emitter-Base Voltage (VEBO): 5V
  • Power Dissipation: 500mW (max)
  • Package Type: TO-18

Features:

  • High collector current (up to 600mA)
  • Fast switching speed
  • Suitable for medium-power amplification
  • Durable and reliable in various applications

Applications:

  • Signal amplification
  • Switching small to medium loads
  • LED drivers
  • Microcontroller interfacing

Package Includes:

  • 1 x 2N2222 NPN Transistor

This versatile transistor is perfect for hobbyists and professionals working on switching and amplification tasks in low to medium-power circuits.

نظرة عامة ومواصفات المنتج — بالعربية

2N2222 NPN Transistor متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم Basic Electronic Components وTransistor، بسعر 1,00 EGP. كود المنتج لدينا: EK820. المنتج متوفر في المخزون وجاهز للشحن الفوري لكل محافظات مصر مع إمكانية الدفع عند الاستلام.

أهم المواصفات الفنية:

  • Product Name: 2N2222 – NPN Transistor
  • Type: Bipolar Junction Transistor (BJT)
  • Polarity: NPN
  • Maximum Collector Current (Ic): 800 mA
  • Maximum Collector Emitter Voltage (Vce): 40 V
  • Maximum Power Dissipation: 500 mW
  • Dc Current Gain (Hfe): 100–300 (typical)
  • Package Type: TO-92

منتج أصلي بجودة مضمونة من إكوسترا، مع دعم فني ومتابعة بعد البيع لكل عملائنا في مصر.

تصفّح المزيد من Basic Electronic Components في إكوسترا.

Specification

Specification

WeightWeight1 g
Dimensions0,4 × 0,4 × 0,5 cm
Product Name2N2222 – NPN Transistor
TypeBipolar Junction Transistor (BJT)
PolarityNPN
Maximum Collector Current (Ic)800 mA
Maximum Collector-Emitter Voltage (Vce)40 V
Maximum Power Dissipation500 mW
DC Current Gain (hFE)100–300 (typical)
Package TypeTO-92
Mounting TypeThrough-Hole
Operating Temperature-55°C to +150°C
ApplicationsSwitching Circuits, Amplification, Arduino / DIY Projects, Signal Processing
Package Contents1× 2N2222 NPN Transistor

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