2N5089 NPN General Purpose Transistor
2N5089 NPN General Purpose Transistor
1. Collector-Emitter Voltage (VCEO): 25V
2. Collector-Base Voltage (VCBO): 30V
3. DC Current Gain (hFE): 400-1200 @10mA
4. Noise Figure (NF): 2.0dB max @100µA
5. Transition Frequency (fT): 50MHz min
6. Package: TO-92
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Description
The 2N5089 is an NPN silicon transistor purpose-built for low-noise, high-gain applications, with hFE reaching as high as 1200 at 10mA and a noise figure as low as 2.0dB at 100µA. It’s the higher-gain member of the 2N5088/2N5089 pair and a favorite for the first amplification stage in audio preamps, microphone circuits, and other noise-sensitive front ends.
With a 50MHz minimum transition frequency and 25V VCEO / 30V VCBO rating in a TO-92 package, it balances plenty of bandwidth and voltage headroom against the low-noise, high-gain characteristics that make it stand out from ordinary general-purpose transistors.
- Extremely high current gain — hFE up to 1200 at 10mA
- Low noise figure — as low as 2.0dB at 100µA
- 50MHz minimum transition frequency
- 25V collector-emitter, 30V collector-base voltage
- 50mA maximum collector current, 625mW dissipation
- TO-92 package for easy prototyping and production use
- Ideal for audio preamp and low-level sensor front ends
نظرة عامة ومواصفات المنتج — بالعربية
2N5089 NPN General Purpose Transistor متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم Transistor، بسعر 1,00 EGP. كود المنتج لدينا: EK990. المنتج غير متوفر حالياً — تواصل معنا عبر واتساب لمعرفة موعد توفره القادم.
أهم المواصفات الفنية:
- Polarity: NPN
- Package: TO-92
- Emitter Base Voltage (Vebo): 3V
- Power Dissipation (Pd): 625mW
- Collector Base Capacitance (Ccb): 4pF max
- Emitter Base Capacitance (Ceb): 10pF max
- الوزن: 1 g
منتج أصلي بجودة مضمونة من إكوسترا، مع دعم فني ومتابعة بعد البيع لكل عملائنا في مصر.
تصفّح المزيد من Transistor في إكوسترا.
Specification
Specification
| WeightWeight | 1 g |
|---|---|
| Dimensions | 0,5 × 0,5 × 0,45 cm |
| Polarity | NPN |
| Package | TO-92 |
| Emitter-Base Voltage (VEBO) | 3V |
| Power Dissipation (PD) | 625mW |
| Collector-Base Capacitance (Ccb) | 4pF max |
| Emitter-Base Capacitance (Ceb) | 10pF max |
