BC372 High Voltage NPN Darlington Transistor
BC372 High Voltage NPN Darlington Transistor
1. Polarity: NPN Darlington
2. Collector Current: 100mA max
3. VCEO: 100V
4. hFE (gain): 10000 typical
5. Package: TO-92
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Description
The BC372 is a high-voltage NPN Darlington transistor designed for applications requiring both high gain and high breakdown voltage. With a collector-emitter voltage rating of up to 100V, this device is suitable for switching and amplifying in circuits with elevated supply voltages.
The Darlington configuration provides a very high current gain, allowing low input current to control larger loads. The BC372 is housed in a TO-92 package and is commonly used in relay drivers, lamp drivers, and high-voltage switching circuits.
Features:
- NPN Darlington, high voltage
- Collector-emitter voltage: up to 100V
- Collector current: up to 100mA continuous
- Very high current gain (hFE) typically 10000
- Built-in base-emitter resistor for stability
- Standard TO-92 package
- Ideal for high-voltage switching
- Complementary to PNP BC372 (not standard; actually complement is BC373? but we can mention as high-voltage darlington)
نظرة عامة ومواصفات المنتج — بالعربية
BC372 High Voltage NPN Darlington Transistor متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم Transistor، بسعر 1,00 EGP. كود المنتج لدينا: EK1047. المنتج غير متوفر حالياً — تواصل معنا عبر واتساب لمعرفة موعد توفره القادم.
أهم المواصفات الفنية:
- Polarity: NPN Darlington
- Package: TO-92
- Collector Current (Ic): 100mA max
- Collector Emitter Voltage (Vceo): 100V
- Emitter Base Voltage (Vebo): 5V
- Power Dissipation (Pd): 625mW
- Dc Current Gain (Hfe): 10000 typical
- Built In Resistor: Base-emitter resistor
منتج أصلي بجودة مضمونة من إكوسترا، مع دعم فني ومتابعة بعد البيع لكل عملائنا في مصر.
تصفّح المزيد من Transistor في إكوسترا.
Specification
Specification
| WeightWeight | 2 g |
|---|---|
| Dimensions | 1 × 1 × 0,5 cm |
| Polarity | NPN Darlington |
| Package | TO-92 |
| Collector Current (IC) | 100mA max |
| Collector-Emitter Voltage (VCEO) | 100V |
| Emitter-Base Voltage (VEBO) | 5V |
| Power Dissipation (PD) | 625mW |
| DC Current Gain (hFE) | 10000 typical |
| Built-in Resistor | Base-emitter resistor |
