IRF530N 17A, 100V, 0.064 Ohm, N-Channel Power MOSFET

100V, 17A N-Channel Power MOSFET
Low R<sub>DS(on)</sub>: 0.064Ω for reduced power loss
Fast switching performance
TO-220 package for easy heat management
Ideal for power control, switching, and motor drive circuits

SKU: EK906 Categories: MOSFET ICs, Semiconductor ICs Tags: MOSFET ICs, Semiconductor ICs

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Description

The IRF530N is an N-channel MOSFET designed for high-speed switching and power applications. It is commonly used in DC-DC converters, motor controllers, power supplies, and amplifiers. With a low on-resistance (R_DS(on)) of 0.064Ω, it offers efficient power handling with minimal heat dissipation.

Features:

✅ High-speed switching capability
✅ Low R_DS(on) for better efficiency
✅ Supports high current (17A) and voltage (100V)
✅ TO-220 package for easy mounting and heat dissipation
✅ Suitable for motor drivers, power amplifiers, and switching circuits

Package Includes:

1 x IRF530N TO-220 MOSFET

Specifications:

🔹 Manufacturer: Generic
🔹 Mounting Style: Through-Hole
🔹 Package Type: TO-220AB
🔹 Transistor Type: N-Channel
🔹 Voltage Rating (V_DS): 100V
🔹 Current Rating (I_D): 17A
🔹 On-Resistance (R_DS(on)): 0.064Ω
🔹 Number of Channels: 1

نظرة عامة ومواصفات المنتج — بالعربية

IRF530N 17A, 100V, 0.064 Ohm, N-Channel Power MOSFET متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم MOSFET ICs وSemiconductor ICs، بسعر 25,00 EGP. كود المنتج لدينا: EK906. المنتج متوفر في المخزون وجاهز للشحن الفوري لكل محافظات مصر مع إمكانية الدفع عند الاستلام.

أهم المواصفات الفنية:

Type: N-Channel Power MOSFET
الموديل: IRF530N
Maximum Drain Current (Id): 17 A
Drain Source Voltage (Vds): 100 V
Rds(On) (On Resistance): 0.064 Ω (typical)
Gate Threshold Voltage (Vgs(Th)): 2–4 V
Power Dissipation: 75 W (typical)
Package Type: TO-220

منتج أصلي بجودة مضمونة من إكوسترا، مع دعم فني ومتابعة بعد البيع لكل عملائنا في مصر.

تصفّح المزيد من MOSFET ICs في إكوسترا.

Specification

WeightWeight	2 g
Dimensions	1 × 1 × 0,45 cm
Type	N-Channel Power MOSFET
Model	IRF530N
Maximum Drain Current (ID)	17 A
Drain-Source Voltage (VDS)	100 V
RDS(on) (On-Resistance)	0.064 Ω (typical)
Gate Threshold Voltage (VGS(th))	2–4 V
Power Dissipation	75 W (typical)
Package Type	TO-220
Operating Temperature	-55°C to +175°C
Applications	Motor Drivers, Power Switching, DC-DC Converters, Arduino/Raspberry Pi Projects, High Current Electronics
Dimensions	10x4x15 (mm) (excluding heatsink tab)
Package Contents	1× IRF530N N-Channel Power MOSFET