IRF730 N-Channel MOSFET Transistor (400V , 5.5A)
IRF730 N-Channel Power MOSFET
1. Drain-Source Voltage (VDS): 400V
2. Drain Current (ID): 5.5A
3. On-Resistance (RDS(on)): <1.0Ω
4. Gate-Source Voltage (VGS max): ±20V
5. Package: TO-220
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10,00 EGP
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Description
The IRF730 is an N-channel power MOSFET built on the PowerMESH II process, rated for 400V drain-source voltage and 5.5A continuous drain current in a TO-220 package. Its mesh-overlay cell design improves the on-resistance-per-area figure of merit while keeping switching speed and gate charge low.
With an RDS(on) under 1.0Ω and exceptional dv/dt capability, it’s built for high-voltage switching applications — pulse power supplies, UPS systems, DC/DC converters, and motor control circuits — where the extra 400V headroom over lower-voltage MOSFETs is needed.
- 400V drain-source voltage rating
- 5.5A continuous drain current
- RDS(on) under 1.0Ω
- Exceptional dv/dt capability, 100% avalanche tested
- Low gate charge for efficient switching
- TO-220 package for easy heatsinking
- Suited to pulse supplies, converters, and motor control
نظرة عامة ومواصفات المنتج — بالعربية
IRF730 N-Channel MOSFET Transistor (400V , 5.5A) متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم MOSFET ICs، بسعر 10,00 EGP. كود المنتج لدينا: EK908. المنتج غير متوفر حالياً — تواصل معنا عبر واتساب لمعرفة موعد توفره القادم.
أهم المواصفات الفنية:
- Polarity: N-Channel
- Package: TO-220
- Gate Charge (Qg Max): 38nC
- Typical Applications: Pulse power supplies / UPS systems / DC/DC converters / Motor control
- الوزن: 2 g
منتج أصلي بجودة مضمونة من إكوسترا، مع دعم فني ومتابعة بعد البيع لكل عملائنا في مصر.
تصفّح المزيد من MOSFET ICs في إكوسترا.
Specification
Specification
| WeightWeight | 2 g |
|---|---|
| Dimensions | 1 × 1 × 0,5 cm |
| Polarity | N-Channel |
| Package | TO-220 |
| Gate Charge (Qg max) | 38nC |
| Typical Applications | Pulse power supplies, UPS systems, DC/DC converters, Motor control |
