IRF9540N 23A, 100V, 0.117 Ohm, P-Channel Power MOSFET
IRF9540N P-Channel Power MOSFET
1. Drain-Source Voltage (VDSS): -100V
2. Drain Current (ID): -23A
3. On-Resistance (RDS(on)): 0.117Ω
4. Power Dissipation (PD): 140W
5. Package: TO-220
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15,00 EGP
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Description
The IRF9540N is a P-channel HEXFET power MOSFET built for high-efficiency switching and load control in DC applications, rated for -100V drain-source voltage and -23A continuous drain current. Its advanced HEXFET construction delivers a low on-resistance of just 0.117Ω, which keeps conduction losses and heat generation down under sustained load.
Housed in a TO-220 package for straightforward heatsinking, it handles up to 140W of total power dissipation and switches fast enough for converters, motor drivers, and power-management circuits, with a ±20V maximum gate-source voltage that’s compatible with common control logic.
- Low on-resistance — RDS(on) = 0.117Ω
- -100V drain-source voltage, -23A continuous drain current
- 140W total power dissipation
- Fast switching for converters and motor drivers
- TO-220 package with good thermal performance
- ±20V gate-source voltage, compatible with standard logic drive
- Fully avalanche rated for rugged switching operation
نظرة عامة ومواصفات المنتج — بالعربية
IRF9540N 23A, 100V, 0.117 Ohm, P-Channel Power MOSFET متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم MOSFET ICs، بسعر 15,00 EGP. كود المنتج لدينا: EK909. المنتج غير متوفر حالياً — تواصل معنا عبر واتساب لمعرفة موعد توفره القادم.
أهم المواصفات الفنية:
- Polarity: P-Channel
- Package: TO-220
- Gate Source Voltage (Vgs Max): ±20V
- Gate Threshold Voltage (Vgs(Th)): -2V to -4V
- Total Gate Charge (Qg): 64.7nC typical
- Junction Temperature (Tj Max): 175°C
- الوزن: 2 g
منتج أصلي بجودة مضمونة من إكوسترا، مع دعم فني ومتابعة بعد البيع لكل عملائنا في مصر.
تصفّح المزيد من MOSFET ICs في إكوسترا.
Specification
Specification
| WeightWeight | 2 g |
|---|---|
| Dimensions | 1 × 1 × 0,45 cm |
| Polarity | P-Channel |
| Package | TO-220 |
| Gate-Source Voltage (VGS max) | ±20V |
| Gate Threshold Voltage (VGS(th)) | -2V to -4V |
| Total Gate Charge (Qg) | 64.7nC typical |
| Junction Temperature (Tj max) | 175°C |
