2N5172 NPN General Purpose Transistor

2N5172 NPN General Purpose Transistor
1. Collector-Emitter Voltage (VCEO): 25V
2. Collector-Base Voltage (VCBO): 25V
3. Collector Current (IC): up to 500mA
4. DC Current Gain (hFE): 100-500
5. Transition Frequency (fT): 200MHz min
6. Package: TO-92

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1,00 EGP

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Description

The 2N5172 is an NPN silicon planar epitaxial transistor built for general-purpose amplifiers and switches handling collector currents up to 300-500mA. Rated at 25V VCEO/VCBO in a TO-92 package, it’s a step up in current handling from typical small-signal transistors while keeping the same familiar footprint.

With hFE of 100–500 at 10mA and a 200MHz minimum transition frequency, it works well in audio circuits, RF stages, digital switching, and general low-power control applications where both decent gain and speed are needed.

  1. General-purpose amplifier and switch, up to 300-500mA
  2. 25V collector-emitter and collector-base voltage
  3. hFE range of 100–500 at 10mA
  4. 200MHz minimum transition frequency
  5. Low collector-emitter saturation voltage — 0.25V max
  6. 625mW power dissipation, TO-92 package
  7. Suited to audio, RF, and digital switching applications

نظرة عامة ومواصفات المنتج — بالعربية

2N5172 NPN General Purpose Transistor متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم Transistor، بسعر 1,00 EGP. كود المنتج لدينا: EK992. المنتج غير متوفر حالياً — تواصل معنا عبر واتساب لمعرفة موعد توفره القادم.

أهم المواصفات الفنية:

  • Polarity: NPN
  • Package: TO-92
  • Emitter Base Voltage (Vebo): 5V
  • Collector Emitter Saturation Voltage (Vce Sat): 0.25V max @10mA
  • Typical Applications: Audio / RF stages / Digital switching
  • الوزن: 1 g

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Specification

Specification

WeightWeight1 g
Dimensions0,5 × 0,5 × 0,45 cm
PolarityNPN
PackageTO-92
Emitter-Base Voltage (VEBO)5V
Collector-Emitter Saturation Voltage (VCE sat)0.25V max @10mA
Typical ApplicationsAudio, RF stages, Digital switching

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