2N5401 PNP Small Signal Transistor

2N5401 PNP Small Signal Transistor
1. Collector-Emitter Voltage (VCEO): 150V
2. Collector-Base Voltage (VCBO): 160V
3. Collector Current (IC): 600mA
4. DC Current Gain (hFE): 60-240
5. Package: TO-92

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1,00 EGP

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Description

The 2N5401 is a PNP silicon epitaxial planar transistor engineered for high-voltage, low-current switching and amplification. Rated at 150V VCEO and 160V VCBO in a compact TO-92 package, it’s the standard part used wherever a circuit needs to switch or amplify at voltages well above what a typical small-signal PNP can handle — telephony circuits being a classic example.

Its 600mA collector current and hFE range of 60–240 give it enough gain and current handling for general-purpose amplifier and switch duty, and it is the direct PNP complement to the NPN 2N5551, making the two a natural push-pull pair.

  1. High voltage handling — 150V VCEO, 160V VCBO
  2. 600mA maximum collector current
  3. hFE range of 60–240
  4. 100MHz transition frequency (matched to 2N5551 complement)
  5. 625mW power dissipation, TO-92 package
  6. Complementary NPN counterpart available (2N5551)
  7. Suited to high-voltage switching and telephony applications

نظرة عامة ومواصفات المنتج — بالعربية

2N5401 PNP Small Signal Transistor متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم Transistor، بسعر 1,00 EGP. كود المنتج لدينا: EK1000. المنتج غير متوفر حالياً — تواصل معنا عبر واتساب لمعرفة موعد توفره القادم.

أهم المواصفات الفنية:

  • Polarity: PNP
  • Package: TO-92
  • Emitter Base Voltage (Vebo): 5V
  • Power Dissipation (Pd): 625mW
  • Complementary Type: 2N5551 (NPN)
  • Typical Applications: High-voltage switching / Telephony circuits
  • الوزن: 1 g

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Specification

Specification

WeightWeight1 g
Dimensions0,5 × 0,5 × 0,45 cm
PolarityPNP
PackageTO-92
Emitter-Base Voltage (VEBO)5V
Power Dissipation (PD)625mW
Complementary Type2N5551 (NPN)
Typical ApplicationsHigh-voltage switching, Telephony circuits

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