2N5551 NPN General Purpose Transistor

2N5551 NPN General Purpose Transistor
1. Collector-Emitter Voltage (VCEO): 160V
2. Collector-Base Voltage (VCBO): 180V
3. Collector Current (IC): 600mA
4. DC Current Gain (hFE): 80 min @10mA
5. Transition Frequency (fT): 100MHz
6. Package: TO-92

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1,00 EGP

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Description

The 2N5551 is an NPN epitaxial silicon transistor purpose-built for high-voltage, general-purpose amplification. Its 160V VCEO and 180V VCBO ratings — far beyond a typical small-signal transistor’s 30-60V range — make it a go-to choice for gas-discharge display drivers, telephone line interfaces, and other circuits that must switch or amplify at elevated DC voltages.

With a 100MHz minimum transition frequency and hFE of at least 80 at 10mA, it also performs well as a general medium-power amplifier in TO-92 through-hole form, and pairs naturally with the complementary PNP 2N5401 for push-pull designs.

  1. High voltage handling — 160V VCEO, 180V VCBO
  2. 100MHz minimum transition frequency
  3. 600mA maximum collector current
  4. 625mW power dissipation, TO-92 package
  5. hFE minimum of 80 at 10mA
  6. Complementary PNP counterpart available (2N5401)
  7. Suited to gas-discharge display driving and telephone switching

نظرة عامة ومواصفات المنتج — بالعربية

2N5551 NPN General Purpose Transistor متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم Transistor، بسعر 1,00 EGP. كود المنتج لدينا: EK1004. المنتج غير متوفر حالياً — تواصل معنا عبر واتساب لمعرفة موعد توفره القادم.

أهم المواصفات الفنية:

  • Polarity: NPN
  • Package: TO-92
  • Emitter Base Voltage (Vebo): 6V
  • Power Dissipation (Pd): 625mW
  • Complementary Type: 2N5401 (PNP)
  • Typical Applications: High-voltage amplifier / Gas discharge display driver
  • الوزن: 1 g

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Specification

Specification

WeightWeight1 g
Dimensions0,5 × 0,5 × 0,45 cm
PolarityNPN
PackageTO-92
Emitter-Base Voltage (VEBO)6V
Power Dissipation (PD)625mW
Complementary Type2N5401 (PNP)
Typical ApplicationsHigh-voltage amplifier, Gas discharge display driver

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