BC637 NPN High Current Transistor

BC637 NPN High Current Transistor
1. Polarity: NPN
2. Collector Current: 500mA max
3. VCEO: 60V
4. hFE (gain): 100-250 typical
5. Package: TO-92

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Description

The BC637 is an NPN high-current transistor designed for applications requiring moderate power amplification and switching. With a higher collector current rating than the BC639, it is well-suited for output driver stages and regulator circuits. The BC637 is commonly used in complementary pairs with the PNP BC638.

This transistor is housed in a TO-92 package and offers good thermal performance for its current capability. Its characteristics include a high current gain and a breakdown voltage suitable for a wide range of general-purpose and driver applications.

Features:

  1. NPN polarity, high-current capability
  2. Collector current: up to 500mA continuous
  3. Collector-emitter voltage: up to 60V
  4. High current gain (hFE) typically 100-250
  5. Standard TO-92 package
  6. Complementary to PNP BC638
  7. Suitable for driver and output stages
  8. Operating temperature range: -55°C to +150°C

نظرة عامة ومواصفات المنتج — بالعربية

BC637 NPN High Current Transistor متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم Transistor، بسعر 1,00 EGP. كود المنتج لدينا: EK1060. المنتج غير متوفر حالياً — تواصل معنا عبر واتساب لمعرفة موعد توفره القادم.

أهم المواصفات الفنية:

  • Polarity: NPN
  • Package: TO-92
  • Collector Current (Ic): 500mA max
  • Collector Emitter Voltage (Vceo): 60V
  • Emitter Base Voltage (Vebo): 5V
  • Power Dissipation (Pd): 625mW
  • Dc Current Gain (Hfe): 100-250
  • Transition Frequency (Ft): 150MHz typical

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Specification

Specification

WeightWeight1 g
Dimensions0,5 × 0,5 × 0,45 cm
PolarityNPN
PackageTO-92
Collector Current (IC)500mA max
Collector-Emitter Voltage (VCEO)60V
Emitter-Base Voltage (VEBO)5V
Power Dissipation (PD)625mW
DC Current Gain (hFE)100-250
Transition Frequency (fT)150MHz typical

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