2N2646 Unijunction Transistor

2N2646 Unijunction Transistor
1. Intrinsic Standoff Ratio (η): 0.56-0.75
2. Interbase Resistance (RBBO): 4.7-9.1kΩ
3. Peak Pulse Emitter Current: 2A
4. Power Dissipation (PD): 300mW
5. Package: TO-18

Apple Shopping Event

Hurry and get discounts on all Apple devices up to 20%

1,00 EGP

6 People watching this product now!

Payment Methods:

Description

The 2N2646 is a silicon unijunction transistor (UJT) — a three-terminal device with a single PN junction that behaves as a voltage-triggered switch rather than a linear amplifier. Its silicon planar construction gives it a lower saturation voltage, lower peak-point and valley currents, and a higher base-one peak pulse voltage than older alloy-junction UJTs, along with much faster switching.

It’s the classic choice for relaxation oscillators, SCR/triac trigger circuits, and free-running pulse generators, where circuit economy is the priority and a guaranteed minimum pulse amplitude is required. Its intrinsic standoff ratio (η) of 0.56-0.75 sets the fixed trigger point of the internal voltage divider.

  1. Silicon planar construction for fast, clean switching
  2. Intrinsic standoff ratio (η) of 0.56–0.75
  3. Interbase resistance of 4.7-9.1kΩ
  4. Peak pulse emitter current up to 2A
  5. 300mW power dissipation, TO-18 package
  6. Low-cost device ideal for pulse generators and SCR triggers
  7. Valley current minimum of 4mA

نظرة عامة ومواصفات المنتج — بالعربية

2N2646 Unijunction Transistor متوفر الآن في متجر إكوسترا للإلكترونيات، ضمن قسم Transistor، بسعر 1,00 EGP. كود المنتج لدينا: EK945. المنتج غير متوفر حالياً — تواصل معنا عبر واتساب لمعرفة موعد توفره القادم.

أهم المواصفات الفنية:

  • Device Type: Unijunction Transistor (UJT)
  • Package: TO-18
  • Interbase Voltage (Vb2B1 Max): 35V
  • Emitter Base2 Voltage (Vb2E Max): 30V
  • Valley Current (Iv Min): 4mA
  • Peak Current (Ip Max): 5µA
  • Junction Temperature Range: -65°C to +125°C
  • الوزن: 1 g

منتج أصلي بجودة مضمونة من إكوسترا، مع دعم فني ومتابعة بعد البيع لكل عملائنا في مصر.

تصفّح المزيد من Transistor في إكوسترا.

Specification

Specification

WeightWeight1 g
Dimensions0,5 × 0,5 × 0,45 cm
Device TypeUnijunction Transistor (UJT)
PackageTO-18
Interbase Voltage (VB2B1 max)35V
Emitter-Base2 Voltage (VB2E max)30V
Valley Current (IV min)4mA
Peak Current (IP max)5µA
Junction Temperature Range-65°C to +125°C

Customer Reviews